Total: 61
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
pipe
TR,-,-
ECOPACK®2
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
Schottky barrier
SiC Schottky
FERD(Field effect rectifier device diode)
100 V
1200 V
40 V
200 V
600 V
30 V
150 V
120 V
60 V
300 V
650 V
45 V
170 V
1A
8A
-
4A
2A
3A
10A
15A
30A
5A
20A
20A(DC)
6A
12A
25A
550 mV @ 1 A
500 mV @ 3 A
1.75 V @ 10 A
1.3 V @ 10 A
1.5 V @ 15 A
550 mV @ 20 A
820 mV @ 10 A
950 mV @ 30 A
1.75 V @ 16 A
620 mV @ 3 A
1.5 V @ 20 A
1.5 V @ 5 A
1.5 V @ 10 A
760 mV @ 3 A
1.3 V @ 30 A
820 mV @ 1 A
1.5 V @ 2 A
1.55 V @ 6 A
2.95 V @ 30 A
1.45 V @ 8 A
1.45 V @ 10 A
3.4 V @ 25 A
1.45 V @ 12 A
650 mV @ 10 A
890 mV @ 20 A
970 mV @ 30 A
2.95 V @ 15 A
1.55 V @ 8 A
960 mV @ 4 A
870 mV @ 4 A
790 mV @ 10 A
1.45 V @ 20 A
1.55 V @ 4 A
895 mV @ 10 A
50 ns
35 ns
0 ns
55 ns
1 µA @ 100 V
20 µA @ 600 V
40 µA @ 650 V
600 µA @ 45 V
8 µA @ 100 V
25 µA @ 120 V
10 µA @ 300 V
50 µA @ 60 V
50 µA @ 45 V
60 µA @ 600 V
1 µA @ 150 V
10 mA @ 30 V
30 µA @ 1200 V
60 µA @ 1200 V
120 µA @ 1200 V
470 µA @ 60 V
60 µA @ 650 V
100 µA @ 650 V
80 µA @ 650 V
40 µA @ 600 V
105 µA @ 650 V
130 µA @ 650 V
90 µA @ 1200 V
150 µA @ 650 V
1.5 µA @ 170 V
210 µA @ 120 V
150 µA @ 100 V
140 µA @ 650 V
275 µA @ 120 V
35 µA @ 100 V
12 µA @ 1200 V
2 µA @ 1200 V
1.5 mA @ 100 V
20 µA @ 60 V
6 µA @ 200 V
300 µA @ 650 V
360 µA @ 30 V
100 mA @ 40 V
150 mA @ 60 V
5 mA @ 200 V
130 mA @ 650 V
725pF @ 0V,1MHz
1650pF @ 0V,1MHz
350pF @ 0V,1MHz
480pF @ 0V,1MHz
540pF @ 0V,1MHz
670pF @ 0V,1MHz
1200pF @ 0V,1MHz
750pF @ 0V,1MHz
460pF @ 0V,1MHz
450pF @ 0V,1MHz
1.2nF @ 0V,1MHz
190pF @ 0V,1MHz
1250pF @ 0V,1MHz
245pF @ 0V,1MHz