Total: 23
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
pipe
ECOPACK®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
No recovery time > 500mA(Io)
standard
Schottky barrier
SiC Schottky
FERD(Field effect rectifier device diode)
20 V
1200 V
200 V
600 V
45 V
170 V
12 V
1A
8A
-
4A
2A
3A
10A
15A
30A
5A
16A(DC)
3.4 V @ 8 A
1.5 V @ 5 A
1.5 V @ 10 A
820 mV @ 3 A
820 mV @ 2 A
1.5 V @ 2 A
2.95 V @ 30 A
890 mV @ 2 A
2.95 V @ 15 A
1.95 V @ 30 A
870 mV @ 4 A
140 mV @ 16 A
560 mV @ 300 mA
420 mV @ 15 A
60 ns
18 ns
50 ns
0 ns
55 ns
20 µA @ 600 V
5 µA @ 200 V
1.2 mA @ 45 V
30 µA @ 1200 V
60 µA @ 1200 V
40 µA @ 600 V
1.5 µA @ 170 V
4 µA @ 170 V
12 µA @ 1200 V
2.8 µA @ 170 V
10 µA @ 12 V
6 µA @ 20 V
725pF @ 0V,1MHz
450pF @ 0V,1MHz
190pF @ 0V,1MHz