Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
Final sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
1A
3A
5A
500 mV @ 1 A
500 mV @ 3 A
550 mV @ 5 A
540 mV @ 5 A
-
15.72 ns
12.5 ns
100 µA @ 30 V
500 µA @ 30 V
500pF @ 4V,1MHz
110pF @ 4V,1MHz
159pF @ 10V,1MHz
485pF @ 0V,1MHz