Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
TR,bulk
SBR®
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
40 V
500mA(DC)
500mA
1.5A(DC)
460 mV @ 500 mA
590 mV @ 1.5 A
-
33 ns
75 µA @ 40 V
85pF @ 2V,1MHz
34pF @ 4V,1MHz