Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
60 V
1A
3A
5A
700 mV @ 1 A
700 mV @ 3 A
700 mV @ 5 A
680 mV @ 3 A
-
500 µA @ 60 V
110pF @ 4V,1MHz
200pF @ 4V,1MHz
300pF @ 4V,1MHz