Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
bulk
TR,CT,bulk
bulk,bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
3A
790 mV @ 3 A
-
600 µA @ 100 V