stop productionTRRapid recovery=< 500ns,> 200mA(Io)55 µA @ 100 V-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Select Diode rectifier

Home

Category

Diode rectifier

Total: 2

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Schottky barrier

Voltage DC reverse (Vr) (maximum)

120 V

Current average rectification (Io)

12A

Voltage at different If - forward (Vf)

830 mV @ 12 A

Reverse recovery time (trr)

Current - reverse leakage at different Vr

55 µA @ 100 V

Capacitance at different Vr and F

Reset