Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
100 V
50 V
200 V
400 V
3A
950 mV @ 3 A
1.25 V @ 3 A
50 ns
5 µA @ 100 V
5 µA @ 400 V
5 µA @ 200 V
5 µA @ 50 V
60pF @ 4V,1MHz