Total: 35
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
pipe
TR,CT,bulk
TR,bulk
bulk,pipe
CoolSiC™+
stop production
No recovery time > 500mA(Io)
SiC Schottky
1200 V
600 V
300 V
10A(DC)
6A(DC)
12A(DC)
8A(DC)
15A(DC)
2A(DC)
5A(DC)
3A(DC)
4A(DC)
7.5A(DC)
5.6A
1.7 V @ 10 A
1.7 V @ 6 A
1.7 V @ 8 A
1.8 V @ 15 A
1.8 V @ 10 A
1.9 V @ 4 A
1.7 V @ 12 A
1.9 V @ 3 A
1.9 V @ 2 A
1.8 V @ 2 A
1.8 V @ 5 A
2.1 V @ 12 A
1.7 V @ 5 A
1.8 V @ 7.5 A
0 ns
50 µA @ 600 V
400 µA @ 600 V
100 µA @ 600 V
30 µA @ 600 V
15 µA @ 600 V
80 µA @ 600 V
120 µA @ 1200 V
300 µA @ 600 V
70 µA @ 600 V
200 µA @ 600 V
200 µA @ 300 V
140 µA @ 600 V
350 µA @ 600 V
48 µA @ 1200 V
180 µA @ 1200 V
240 µA @ 1200 V
360 µA @ 1200 V
305 µA @ 1200 V
870pF @ 1V,1MHz
600pF @ 0V,1MHz
350pF @ 0V,1MHz
300pF @ 0V,1MHz
130pF @ 1V,1MHz
310pF @ 1V,1MHz
250pF @ 1V,1MHz
60pF @ 1V,1MHz
240pF @ 1V,1MHz
280pF @ 1V,1MHz
150pF @ 0V,1MHz
450pF @ 1V,1MHz
480pF @ 1V,1MHz
170pF @ 1V,1MHz
280pF @ 0V,1MHz
125pF @ 1V,1MHz
380pF @ 1V,1MHz
500pF @ 1V,1MHz
750pF @ 1V,1MHz
90pF @ 1V,1MHz
375pF @ 1V,1MHz
580pF @ 1V,1MHz