Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
1A
2A
550 mV @ 1 A
550 mV @ 2 A
510 mV @ 1 A
-
500 µA @ 40 V
100 µA @ 40 V