Total: 38
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
SWITCHMODE™
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
50 V
1A
1.5A
2A
3A
5A
6A
15mA(DC)
1.3 V @ 1 A
1 V @ 3 A
950 mV @ 2 A
950 mV @ 3 A
1.2 V @ 1 A
1 V @ 1 A
1.3 V @ 2 A
700 mV @ 1 A
875 mV @ 1 A
940 mV @ 2 A
950 mV @ 1 A
740 mV @ 3 A
670 mV @ 5 A
600 mV @ 3 A
1.2 V @ 6 A
650 mV @ 2 A
1.3 V @ 1.5 A
650 mV @ 3 A
580 mV @ 1 A
1.3 V @ 3 A
650 mV @ 1 A
950 mV @ 15 mA
1.2 V @ 1.5 A
1 V @ 2 A
1.2 V @ 2 A
-
50 ns
35 ns
150 ns
30 ns
200 ns
1 ns
10 µA @ 50 V
5 µA @ 50 V
500 µA @ 50 V
2 µA @ 50 V
200 µA @ 50 V
200 µA @ 60 V
100 µA @ 50 V
1 mA @ 50 V
200 nA @ 40 V
50pF @ 4V,1MHz
12pF @ 4V,1MHz
30pF @ 4V,1MHz
60pF @ 4V,1MHz
15pF @ 4V,1MHz
45pF @ 4V,1MHz
140pF @ 4V,1MHz
110pF @ 4V,1MHz
75pF @ 4V,1MHz
25pF @ 4V,1MHz
35pF @ 4V,1MHz
2.1pF @ 0V,1MHz
125pF @ 4V,1MHz