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Diode rectifier

Total: 10

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 1.5A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 1.5A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 1.5A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 1.5A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 1.5A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 1.5A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 1.5A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 1.5A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 1.5A DO15

Store: ShenZhen/Hongkong

Description：DIODE AVALANCHE 600V 1.5A MELF

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

bulk

TR

TR,CT

TB

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Standard recovery>500ns,> 200mA(Io)

Diode type

standard

avalanche

Voltage DC reverse (Vr) (maximum)

600 V

Current average rectification (Io)

1.5A

Voltage at different If - forward (Vf)

1.05 V @ 1 A

1.7 V @ 1.5 A

1.3 V @ 1.5 A

1.2 V @ 1.5 A

1.1 V @ 1.5 A

Reverse recovery time (trr)

-

3 µs

75 ns

250 ns

Current - reverse leakage at different Vr

1 µA @ 600 V

5 µA @ 600 V

Capacitance at different Vr and F

-

21pF @ 0V,1MHz

10pF @ 4V,1MHz

15pF @ 4V,1MHz

20pF @ 4V,1MHz

25pF @ 4V,1MHz

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