Total: 8
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
pipe
CoolSiC™+
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1200 V
600 V
15A(DC)
1.25 V @ 15 A
1.8 V @ 15 A
1.6 V @ 15 A
-
0 ns
250 µA @ 600 V
27 µA @ 600 V
360 µA @ 1200 V
305 µA @ 1200 V
870pF @ 1V,1MHz
750pF @ 1V,1MHz