Total: 46
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
TR,CT,bulk
TB
bulk,bulk
CT,TB
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
75 V
100 V
80 V
200 V
30 V
150 V
70 V
250 V
125 V
250mA(DC)
200mA(DC)
200mA
150mA
500mA
300mA
1 V @ 100 mA
4 ns
-
5 ns
50 ns
5 µA @ 75 V
25 nA @ 20 V
2 µA @ 25 V
100 nA @ 50 V
100 nA @ 100 V
25 µA @ 125 V
100 nA @ 175 V
25 nA @ 175 V
25 nA @ 25 V
25 nA @ 60 V
100 nA @ 75 V
50 nA @ 225 V
25 nA @ 125 V
2pF @ 0V,1MHz
4pF @ 0V,1MHz
10pF @ 1V,1MHz
5pF @ 0V,1MHz
8pF @ 0V,1MHz
6pF @ 0V,1MHz