Rapid recovery=< 500ns,> 200mA(Io)140pF @ 4V,1MHz100 µA @ 20 V-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

TR

TR,CT

series

Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Schottky barrier

Voltage DC reverse (Vr) (maximum)

20 V

Current average rectification (Io)

3A

Voltage at different If - forward (Vf)

500 mV @ 3 A

Reverse recovery time (trr)

-

Current - reverse leakage at different Vr

100 µA @ 20 V

Capacitance at different Vr and F

140pF @ 4V,1MHz