TRRapid recovery=< 500ns,> 200mA(Io)400 V15pF @ 4V,1MHz-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

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Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 1A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 1A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 1A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 1A SMB

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 1A DO41

Price：1+

￥0.10

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 1A DO41

Price：1+

￥0.06

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

TR

series

Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

400 V

Current average rectification (Io)

1A

Voltage at different If - forward (Vf)

1.3 V @ 1 A

1.2 V @ 1 A

Reverse recovery time (trr)

150 ns

200 ns

Current - reverse leakage at different Vr

5 µA @ 400 V

Capacitance at different Vr and F

15pF @ 4V,1MHz

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