Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
60 V
10 V
45 V
750mA(DC)
600 mV @ 200 mA
580 mV @ 1 A
490 mV @ 750 mA
610 mV @ 750 mA
-
3 ns
12 ns
100 µA @ 30 V
100 µA @ 45 V
6 µA @ 10 V
10 µA @ 45 V
10pF @ 10V,1MHz
25pF @ 25V,1MHz
17pF @ 25V,1MHz
37pF @ 10V,1MHz