Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
60 V
700mA
580 mV @ 700 mA
-
100 µA @ 60 V
38pF @ 10V,1MHz