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Diode rectifier

Total: 14

CRG01(TE85L,Q,M)
Brand：Toshiba
Stock：52722
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 700MA SFLAT
Offer
1N5401-B
Brand：Diodes
Stock：56975
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 3A DO201AD
Offer
10A02-T
Brand：Diodes
Stock：68259
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 10A R6
Offer
1N5401-T
Brand：Diodes
Stock：17302
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 3A DO201AD
Offer
6A1-T
Brand：Diodes
Stock：67984
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 6A R6
Offer
DSK10B-BT
Brand：ON
Stock：15626
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 1A AXIAL
Offer
Price：1+
￥0.07
DSK10B-AT1
Brand：ON
Stock：22530
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 1A AXIAL
Offer
DSF10TB-BT
Brand：ON
Stock：18320
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 1A DO204AL
Offer
Price：1+
￥0.07
DSF10TB-AT1
Brand：ON
Stock：38566
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 1A DO204AL
Offer
Price：1+
￥0.07
DSK10B
Brand：ON
Stock：18216
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 1A AXIAL
Offer
Price：1+
￥0.07
DSF10TB
Brand：ON
Stock：71911
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 1A DO204AL
Offer
Price：1+
￥0.07
DS135AE
Brand：ON
Stock：65384
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 1A DO204AL
Offer
Price：1+
￥0.10
1N5401RL
Brand：ON
Stock：71281
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 3A AXIAL
Offer
Price：1+
￥0.04
1N4002RL
Brand：ON
Stock：44058
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 1A DO41
Offer
Price：1+
￥0.02
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

bulk

TR

TR,CT

TR,CT,bulk

TR,bulk

bulk,bulk

series
Part status

stop production

Speed

Standard recovery>500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

100 V

Current average rectification (Io)

1A

3A

10A

700mA

6A

Voltage at different If - forward (Vf)

1.1 V @ 1 A

1 V @ 3 A

1 V @ 1 A

900 mV @ 6 A

1 V @ 10 A

1.1 V @ 700 mA

Reverse recovery time (trr)

-

Current - reverse leakage at different Vr

10 µA @ 100 V

Capacitance at different Vr and F

-

50pF @ 4V,1MHz

150pF @ 4V,1MHz

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