Standard recovery>500ns,> 200mA(Io)600 V1.25 V @ 50 A-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

Total: 4

SIDC23D60E6X1SA5

Brand：Infineon

Stock：54410

Store: ShenZhen/Hongkong

Description：DIODE SWITCHING 600V WAFER

SIDC23D60E6X1SA1

Brand：Infineon

Stock：66387

Store: ShenZhen/Hongkong

Description：DIODE SWITCHING 600V WAFER

SIDC23D60E6YX1SA1

Brand：Infineon

Stock：49603

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 50A WAFER

SIDC23D60E6X1SA4

Brand：Infineon

Stock：34249

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 50A WAFER

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

bulk

series

Part status

stop production

Speed

Standard recovery>500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

600 V

Current average rectification (Io)

50A(DC)

Voltage at different If - forward (Vf)

1.25 V @ 50 A

Reverse recovery time (trr)

Current - reverse leakage at different Vr

27 µA @ 600 V

Capacitance at different Vr and F

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