On saleStandard recovery>500ns,> 200mA(Io)60 VAutomotive, AEC-Q101, SBR®-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

TR

TR,CT

series

Automotive, AEC-Q101, SBR®

Part status

On sale

Speed

Standard recovery>500ns,> 200mA(Io)

Diode type

Level barrier

Voltage DC reverse (Vr) (maximum)

60 V

Current average rectification (Io)

2A

3A

Voltage at different If - forward (Vf)

620 mV @ 3 A

530 mV @ 3 A

510 mV @ 2 A

Reverse recovery time (trr)

-

Current - reverse leakage at different Vr

150 µA @ 60 V

500 µA @ 60 V

100 µA @ 60 V

Capacitance at different Vr and F

-

75pF @ 10V,1MHz