Total: 7
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
avalanche
100 V
200 V
400 V
600 V
1000 V
800 V
1.5A
600mA
850mA
1.05 V @ 1 A
1.3 V @ 1 A
980 mV @ 1 A
3 µs
300 ns
25 ns
1 µA @ 200 V
1 µA @ 400 V
1 µA @ 600 V
1 µA @ 1000 V
1 µA @ 100 V
1 µA @ 800 V
21pF @ 0V,1MHz
20pF @ 0V,1MHz
50pF @ 0V,1MHz