Total: 7
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT,bulk
CoolSiC™+
On sale
stop production
No recovery time > 500mA(Io)
SiC Schottky
1200 V
600 V
650 V
10A(DC)
8A(DC)
13A(DC)
5A(DC)
3A(DC)
5.6A
-
1.7 V @ 10 A
1.9 V @ 4 A
1.8 V @ 5 A
1.95 V @ 8 A
2.3 V @ 3 A
0 ns
50 µA @ 600 V
15 µA @ 600 V
33 µA @ 1200 V
40 µA @ 1200 V
14 µA @ 420 V
180 µA @ 650 V
130pF @ 1V,1MHz
301pF @ 1V,1MHz
365pF @ 1V,1MHz
205pF @ 1V,1MHz
300pF @ 1V,1MHz
60pF @ 1V,1MHz