stop productionRapid recovery=< 500ns,> 200mA(Io)4A45 V Level barrier-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Category

Diode rectifier

Total: 1

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

TR,CT

series

TrenchSBR

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Level barrier

Voltage DC reverse (Vr) (maximum)

45 V

Current average rectification (Io)

Voltage at different If - forward (Vf)

520 mV @ 4 A

Reverse recovery time (trr)

Current - reverse leakage at different Vr

100 µA @ 45 V

Capacitance at different Vr and F

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