Total: 14
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
CT,TB
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
20 V
200mA
500mA
350mA(DC)
600 mV @ 200 mA
500 mV @ 200 mA
510 mV @ 200 mA
650 mV @ 500 mA
-
10 ns
10 µA @ 20 V
5 µA @ 40 V
5 µA @ 20 V
5 µA @ 10 V
50pF @ 0V,1MHz