Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
750mA(DC)
490 mV @ 750 mA
12 ns
100 µA @ 30 V
25pF @ 25V,1MHz