Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
50 V
15mA(DC)
950 mV @ 15 mA
1 ns
200 nA @ 40 V
2.1pF @ 0V,1MHz