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Diode rectifier

Total: 12

CLH05,LMBJQ(O
Brand：Toshiba
Stock：53134
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 5A L-FLAT
Offer
CLH05(TE16R,Q)
Brand：Toshiba
Stock：67312
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 5A L-FLAT
Offer
CLH05(T6L,NKOD,Q)
Brand：Toshiba
Stock：52649
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 5A L-FLAT
Offer
CLH01(TE16R,Q)
Brand：Toshiba
Stock：37864
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 3A L-FLAT
Offer
CLH01(TE16L,Q)
Brand：Toshiba
Stock：20109
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 3A L-FLAT
Offer
CRH01(TE85L)
Brand：Toshiba
Stock：27860
Store: ShenZhen/Hongkong
Description：DIODE SWITCHING 200V 1A SFLAT
Offer
CMH01(TE12L,Q,M)
Brand：Toshiba
Stock：651
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 3A M-FLAT
Offer
Price：1+
￥0.39
CMH07(TE12L,Q,M)
Brand：Toshiba
Stock：38116
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 2A M-FLAT
Offer
Price：1+
￥0.27
CRH01(TE85R,Q,M)
Brand：Toshiba
Stock：57052
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 1A SFLAT
Offer
Price：1+
￥0.20
CMH04(TE12L,Q,M)
Brand：Toshiba
Stock：14211
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 1A MFLAT
Offer
Price：1+
￥0.17
CRH02(TE85L,Q,M)
Brand：Toshiba
Stock：48823
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 500MA S-FLAT
Offer
Price：1+
￥0.14
CRH01(TE85L,Q,M)
Brand：Toshiba
Stock：6273
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 1A SFLAT
Offer
Price：1+
￥0.71
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

bulk

TR

TR,CT

CT

series
Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

200 V

Current average rectification (Io)

1A

500mA

2A

3A

5A(DC)

3A(DC)

Voltage at different If - forward (Vf)

980 mV @ 1 A

980 mV @ 5 A

980 mV @ 3 A

980 mV @ 2 A

950 mV @ 500 mA

0.98 V @ 5 A

Reverse recovery time (trr)

35 ns

100 ns

Current - reverse leakage at different Vr

10 µA @ 200 V

Capacitance at different Vr and F

-

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