Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
2A
3A
500 mV @ 3 A
500 mV @ 2 A
-
150 µA @ 30 V
140pF @ 4V,1MHz