Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR,CT,bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
8A
700 mV @ 8 A
-
1 mA @ 30 V
200 µA @ 30 V
550pF @ 4V,1MHz