Through-Hole Rapid recovery=< 500ns,> 200mA(Io)Schottky barrier-70 V-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Through-Hole

packing

TR

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Schottky barrier

Voltage DC reverse (Vr) (maximum)

70 V

Current average rectification (Io)

1A

3A

5A

Voltage at different If - forward (Vf)

800 mV @ 1 A

790 mV @ 3 A

800 mV @ 5 A

Reverse recovery time (trr)

-

Current - reverse leakage at different Vr

500 µA @ 70 V

Capacitance at different Vr and F

-