Total: 21
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
pipe
Automotive, AEC-Q101
TrenchSBR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
FERD(Field effect rectifier device diode)
60 V
20A
600 mV @ 20 A
570 mV @ 20 A
630 mV @ 20 A
530 mV @ 20 A
510 mV @ 20 A
560 mV @ 20 A
565 mV @ 20 A
580 mV @ 20 A
-
400 µA @ 60 V
320 µA @ 60 V
180 µA @ 60 V
85 µA @ 60 V
230 µA @ 60 V
125 µA @ 60 V
800 µA @ 60 V
771pF @ 4V,1MHz