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Diode rectifier

Total: 14

JANTXV1N6628US
Brand：Microchip
Stock：22638
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 1.75A D5B
Offer
JANTXV1N6622US
Brand：Microchip
Stock：8740
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 1.2A D5A
Offer
JANTXV1N6622
Brand：Microchip
Stock：49785
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 1.2A AXIAL
Offer
JAN1N6622
Brand：Microchip
Stock：55414
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 2A AXIAL
Offer
JANTX1N6628US
Brand：Microchip
Stock：72451
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 1.75A D5B
Offer
Price：1+
￥29.11
JANTX1N6622
Brand：Microchip
Stock：29132
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 2A AXIAL
Offer
Price：1+
￥24.16
JANTXV1N6628
Brand：Microchip
Stock：66532
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 1.75A AXIAL
Offer
Price：1+
￥23.93
JAN1N6628US
Brand：Microchip
Stock：44675
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 1.75A D5B
Offer
Price：1+
￥23.61
JANTX1N6628
Brand：Microchip
Stock：60350
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 1.75A AXIAL
Offer
Price：1+
￥21.39
1N6628US
Brand：Microchip
Stock：71470
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 1.75A A-MELF
Offer
Price：1+
￥20.95
JANTX1N6622US
Brand：Microchip
Stock：70604
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 2A D5A
Offer
Price：1+
￥18.32
JAN1N6622US
Brand：Microchip
Stock：12619
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 2A D5A
Offer
Price：1+
￥17.47
JAN1N6628
Brand：Microchip
Stock：4900
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 1.75A AXIAL
Offer
Price：1+
￥16.32
1N6622US
Brand：Microchip
Stock：56903
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 660V 1.2A A-MELF
Offer
Price：1+
￥9.70
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

bulk

series

Military, MIL-PRF-19500/585

Military, MIL-PRF-19500/590

Part status

On sale

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

660 V

Current average rectification (Io)

2A

1.2A

1.75A

Voltage at different If - forward (Vf)

1.35 V @ 2 A

1.6 V @ 2 A

1.4 V @ 1.2 A

1.35 V @ 1.2 A

Reverse recovery time (trr)

30 ns

Current - reverse leakage at different Vr

2 µA @ 600 V

500 nA @ 660 V

2 µA @ 660 V

Capacitance at different Vr and F

-

10pF @ 10V,1MHz

40pF @ 10V,1MHz

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