Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
SBR®
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Level barrier
130 V
215mA(DC)
4A
1.25 V @ 150 mA
750 mV @ 4 A
-
3 µs
5 nA @ 75 V
100 µA @ 130 V
5pF @ 0V,1MHz