Total: 47
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
TR,CT,bulk
TR,bulk
TB
bulk,TB
Automotive, AEC-Q101
On sale
Final sale
stop production
Not applicable to new design
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
75 V
100 V
80 V
40 V
50 V
200 V
300 V
250mA(DC)
1 V @ 100 mA
1.25 V @ 150 mA
1.25 V @ 200 mA
590 mV @ 200 mA
710 mV @ 200 mA
600 mV @ 200 mA
750 mV @ 100 mA
1.1 V @ 100 mA
700 mV @ 200 mA
510 mV @ 200 mA
480 mV @ 30 mA
4 ns
-
5 ns
50 ns
3 ns
10 ns
1.5 µs
5 µA @ 75 V
1 µA @ 75 V
5 nA @ 75 V
100 nA @ 200 V
10 µA @ 40 V
100 nA @ 80 V
6 µA @ 40 V
100 nA @ 50 V
100 nA @ 75 V
2 µA @ 30 V
5 µA @ 30 V
150 nA @ 250 V
2 µA @ 40 V
1 µA @ 70 V
2pF @ 0V,1MHz
1.5pF @ 0V,1MHz
50pF @ 0V,1MHz
5pF @ 0V,1MHz
6pF @ 10V,1MHz
4pF @ 5V,1MHz
6pF @ 0V,1MHz
2.3pF @ 0V,1MHz
6pF @ 5V,1MHz