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Diode rectifier

Total: 350

CUS10I40A(TE85L,QM
Brand：Toshiba
Stock：35469
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 40V 1A US-FLAT
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CUS10I30A(TE85L,QM
Brand：Toshiba
Stock：2192
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 30V 1A US-FLAT
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CUS06(TE85L,Q,M)
Brand：Toshiba
Stock：55314
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 20V 1A US-FLAT
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CUS05(TE85L,Q,M)
Brand：Toshiba
Stock：70245
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 20V 1A US-FLAT
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CMH05(TE12L,Q,M)
Brand：Toshiba
Stock：40687
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 400V 1A M-FLAT
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CMH05A(TE12L,Q,M)
Brand：Toshiba
Stock：34552
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 400V 1A MFLAT
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U1GWJ49(TE12L,F)
Brand：Toshiba
Stock：60632
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 40V 1A PWMINI
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CUS02(TE85L,Q,M)
Brand：Toshiba
Stock：77225
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 30V 1A USFLAT
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CUS01(TE85L,Q,M)
Brand：Toshiba
Stock：51625
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 30V 1A USFLAT
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CRS11(TE85L)
Brand：Toshiba
Stock：4903
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 30V 1A SFLAT
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CRS04(TE85L)
Brand：Toshiba
Stock：10308
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 40V 1A SFLAT
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CRS01(TE85L)
Brand：Toshiba
Stock：51995
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 30V 1A SFLAT
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CRH01(TE85L)
Brand：Toshiba
Stock：27860
Store: ShenZhen/Hongkong
Description：DIODE SWITCHING 200V 1A SFLAT
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CMS09(TE12L)
Brand：Toshiba
Stock：47668
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 30V 1A MFLAT
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STTH1R04Q
Brand：ST
Stock：47197
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 400V 1A DO15
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STPS1L40MF
Brand：ST
Stock：61480
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 40V 1A STMITEFLAT
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STTH1R04
Brand：ST
Stock：41737
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 400V 1A DO41
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STPS1150M
Brand：ST
Stock：18657
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 150V 1A STMITE
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STTH112
Brand：ST
Stock：51823
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.2KV 1A DO41
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STTH108RL
Brand：ST
Stock：30011
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 800V 1A DO41
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Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

-

Surface mount

Through-Hole

packing

bulk

TR

TR,CT

CT

TR,CT,bulk

TR,bulk

TR,CT,CT

TB

bulk,bulk

belt

TR,TR,CT

CT,TB

Digi-Reel®

series

Automotive, AEC-Q101

SWITCHMODE™

POWERMITE®

MEGAHERTZ™

SBR®

TURBOSWITCH™

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Schottky barrier

Level barrier

Voltage DC reverse (Vr) (maximum)

75 V

20 V

100 V

80 V

1200 V

40 V

50 V

200 V

400 V

600 V

1000 V

800 V

30 V

500 V

150 V

70 V

60 V

300 V

10 V

90 V

15 V

Current average rectification (Io)

1A

Voltage at different If - forward (Vf)

450 mV @ 1 A

1.1 V @ 1 A

600 mV @ 1 A

1.3 V @ 1 A

980 mV @ 1 A

550 mV @ 1 A

500 mV @ 1 A

450 mV @ 700 mA

1.7 V @ 1 A

1.25 V @ 1 A

380 mV @ 1 A

1.2 V @ 1 A

1.1 V @ 200 mA

540 mV @ 1 A

1 V @ 1 A

700 mV @ 1 A

800 mV @ 1 A

875 mV @ 1 A

950 mV @ 1 A

900 mV @ 1 A

490 mV @ 1 A

365 mV @ 1 A

750 mV @ 1 A

790 mV @ 1 A

1.75 V @ 1 A

750 mV @ 3 A

760 mV @ 1 A

520 mV @ 3 A

595 mV @ 2 A

530 mV @ 1 A

340 mV @ 1 A

510 mV @ 1 A

850 mV @ 1 A

720 mV @ 1 A

410 mV @ 1 A

680 mV @ 1 A

470 mV @ 1 A

560 mV @ 1 A

2.4 V @ 1 A

415 mV @ 2 A

395 mV @ 1 A

580 mV @ 1 A

380 V @ 1 A

975 mV @ 1 A

1.5 V @ 1 A

420 mV @ 1 A

360 mV @ 1 A

820 mV @ 1 A

620 mV @ 1 A

770 mV @ 1 A

310 mV @ 1 A

650 mV @ 1 A

570 mV @ 1 A

480 mV @ 1 A

1.9 V @ 1 A

390 mV @ 1 A

1.65 V @ 1 A

940 mV @ 1 A

390 mV @ 700 mA

490 mV @ 700 mA

1.8 V @ 1 A

370 mV @ 700 mA

Reverse recovery time (trr)

-

300 ns

25 ns

60 ns

65 ns

50 ns

500 ns

75 ns

35 ns

40 ns

250 ns

150 ns

30 ns

10 ns

100 ns

45 ns

55 ns

12 ns

200 ns

12.4 ns

5.875 ns

5.695 ns

115 ns

Current - reverse leakage at different Vr

1 mA @ 20 V

1 µA @ 75 V

10 µA @ 50 V

1 mA @ 40 V

1 µA @ 600 V

1 mA @ 30 V

200 µA @ 20 V

-

20 µA @ 600 V

10 µA @ 400 V

200 µA @ 30 V

5 µA @ 1000 V

200 µA @ 40 V

60 µA @ 30 V

5 µA @ 100 V

10 µA @ 1000 V

5 µA @ 600 V

75 µA @ 30 V

10 µA @ 600 V

2 µA @ 200 V

10 µA @ 200 V

410 µA @ 30 V

500 µA @ 40 V

5 µA @ 400 V

100 µA @ 30 V

10 µA @ 100 V

5 µA @ 200 V

5 µA @ 800 V

10 µA @ 800 V

5 µA @ 300 V

2 µA @ 100 V

2 µA @ 150 V

100 µA @ 40 V

5 µA @ 50 V

500 µA @ 10 V

500 µA @ 20 V

500 µA @ 60 V

500 µA @ 100 V

500 µA @ 50 V

800 µA @ 40 V

500 µA @ 30 V

500 nA @ 200 V

2 µA @ 50 V

400 µA @ 20 V

100 µA @ 60 V

40 µA @ 100 V

50 µA @ 15 V

1 µA @ 10 V

10 µA @ 20 V

500 µA @ 80 V

600 µA @ 20 V

200 µA @ 60 V

150 µA @ 30 V

200 µA @ 100 V

10 µA @ 300 V

100 µA @ 20 V

400 µA @ 40 V

50 µA @ 40 V

50 µA @ 60 V

200 µA @ 80 V

200 µA @ 90 V

10 µA @ 150 V

5 µA @ 1200 V

30 µA @ 40 V

500 µA @ 90 V

80 µA @ 25 V

1 mA @ 60 V

15 µA @ 16 V

500 nA @ 5 V

100 µA @ 50 V

45 µA @ 20 V

20 µA @ 400 V

10 µA @ 500 V

1 mA @ 50 V

10 µA @ 1200 V

3 µA @ 7.5 V

30 µA @ 30 V

40 µA @ 20 V

1 µA @ 150 V

1.5 mA @ 30 V

500 µA @ 70 V

3 µA @ 200 V

200 µA @ 70 V

350 nA @ 100 V

35 µA @ 40 V

60 µA @ 40 V

30 µA @ 20 V

Capacitance at different Vr and F

70pF @ 4V,1MHz

-

50pF @ 4V,1MHz

12pF @ 4V,1MHz

10pF @ 4V,1MHz

15pF @ 4V,1MHz

45pF @ 4V,1MHz

80pF @ 4V,1MHz

25pF @ 10V,1MHz

110pF @ 4V,1MHz

35pF @ 10V,1MHz

52pF @ 10V,1MHz

75pF @ 4V,1MHz

27pF @ 10V,1MHz

45pF @ 10V,1MHz

20pF @ 10V,1MHz

40pF @ 10V,1MHz

8pF @ 4V,1MHz

25pF @ 5V,1MHz

76pF @ 10V,1MHz

175pF @ 0V,1MHz

125pF @ 0V,1MHz

27pF @ 4V,1MHz

36pF @ 5V,1MHz

32pF @ 10V,1MHz

50pF @ 10V,1MHz

63pF @ 10V,1MHz

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