Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
Automotive, AEC-Q101
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
Level barrier
200 V
400 V
150 V
1A
900 mV @ 1 A
-
35 ns
85 ns
50 µA @ 150 V
50 µA @ 400 V
3 µA @ 200 V
55pF @ 4V,1MHz
32pF @ 4V,1MHz