Total: 63
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
pipe
TR,CT,bulk
TR,bulk
bulk,pipe
bulk,bulk
Automotive, AEC-Q101
Automotive, AEC-Q100/101, CoolSiC™
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
Schottky barrier
SiC Schottky
1500 V
1200 V
40 V
600 V
30 V
60 V
300 V
650 V
700 V
10A(DC)
1.8 V @ 20 A
1.35 V @ 6.5 A
-
1.6 V @ 10 A
1.7 V @ 10 A
1.75 V @ 10 A
1.8 V @ 10 A
1.5 V @ 10 A
470 mV @ 10 A
0.47 V @ 10 A
0.55 V @ 10 A
0.58 V @ 10 A
2.1 V @ 10 A
1.95 V @ 10 A
1.25 V @ 10 A
600 ns
220 ns
0 ns
100 µA @ 1300 V
250 µA @ 1300 V
1 mA @ 40 V
1 mA @ 30 V
40 µA @ 650 V
200 µA @ 1200 V
200 µA @ 650 V
1 mA @ 60 V
60 µA @ 650 V
50 µA @ 650 V
90 µA @ 650 V
180 µA @ 650 V
62 µA @ 1200 V
90 µA @ 600 V
200 µA @ 300 V
140 µA @ 600 V
350 µA @ 600 V
27 µA @ 1200 V
27 µA @ 600 V
240 µA @ 1200 V
340 µA @ 650 V
400 µA @ 650 V
1.7 mA @ 650 V
421pF @ 1V,100kHz
575pF @ 1V,100kHz
612pF @ 1V,100kHz
600pF @ 0V,1MHz
350pF @ 0V,1MHz
36pF @ 650V,1MHz
530pF @ 10V,1MHz
420pF @ 10V,1MHz
345pF @ 10V,1MHz
525pF @ 1V,1MHz
300pF @ 1V,1MHz
290pF @ 1V,1MHz
303pF @ 1V,1MHz
480pF @ 1V,1MHz
600pF @ 1V,1MHz
500pF @ 1V,1MHz
580pF @ 1V,1MHz