Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
SBR®
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Level barrier
300 V
8A
900 mV @ 8 A
30 ns
50 µA @ 300 V
30pF @ 4V,1MHz