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Diode rectifier

Total: 8

SBR8M100P5-13D
Brand：Diodes
Stock：32039
Store: ShenZhen/Hongkong
Description：DIODE SBR 100V 8A POWERDI5
Offer
SBR8M100P5Q-13D
Brand：Diodes
Stock：68377
Store: ShenZhen/Hongkong
Description：DIODE SBR 100V 8A POWERDI5
Offer
Price：1+
￥0.33
SBR8M100P5Q-13
Brand：Diodes
Stock：35560
Store: ShenZhen/Hongkong
Description：DIODE SBR 100V 8A POWERDI5
Offer
Price：1+
￥0.80
SBR8M100P5-13
Brand：Diodes
Stock：73502
Store: ShenZhen/Hongkong
Description：DIODE SBR 100V 8A POWERDI5
Offer
Price：1+
￥0.81
FS8K
Brand：ON
Stock：63532
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 800V 8A TO277-3
Offer
Price：1+
￥0.20
FS8G
Brand：ON
Stock：42532
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 400V 8A TO277-3
Offer
Price：1+
￥1.68
FS8J
Brand：ON
Stock：53609
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 600V 8A TO277-3
Offer
Price：1+
￥1.25
FS8M
Brand：ON
Stock：22043
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1KV 8A TO277-3
Offer
Price：1+
￥1.50
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

TR

TR,CT

series

Automotive, AEC-Q101

Part status

On sale

Speed

Standard recovery>500ns,> 200mA(Io)

Diode type

standard

Level barrier

Voltage DC reverse (Vr) (maximum)

100 V

400 V

600 V

1000 V

800 V

Current average rectification (Io)

8A

Voltage at different If - forward (Vf)

1.1 V @ 8 A

880 mV @ 8 A

Reverse recovery time (trr)

-

3.37 µs

Current - reverse leakage at different Vr

5 µA @ 1000 V

5 µA @ 600 V

5 µA @ 400 V

5 µA @ 800 V

2 µA @ 100 V

Capacitance at different Vr and F

-

118pF @ 0V,1MHz

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