Total: 174
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
CT
TR,CT,bulk
TB
CT,TB
Automotive, AEC-Q101
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
avalanche
Level barrier
20 V
100 V
40 V
50 V
200 V
400 V
600 V
1000 V
800 V
30 V
500 V
300 V
1.5A
450 mV @ 1 A
1.05 V @ 1 A
1.04 V @ 1.5 A
1.7 V @ 1.5 A
460 mV @ 1.5 A
1 V @ 1.5 A
1.3 V @ 1.5 A
1.4 V @ 1.5 A
1.15 V @ 1.5 A
360 mV @ 1.5 A
400 mV @ 1 A
850 mV @ 1.5 A
1.2 V @ 1.5 A
1.1 V @ 1.5 A
1.2 V @ 4.5 A
950 mV @ 1.5 A
640 mV @ 1.5 A
550 mV @ 1.5 A
510 mV @ 1.5 A
430 mV @ 1.5 A
520 mV @ 1.5 A
400 mV @ 1.5 A
490 mV @ 1.5 A
-
3 µs
50 ns
500 ns
75 ns
35 ns
250 ns
150 ns
30 ns
32 ns
1 µA @ 200 V
1 µA @ 400 V
1 µA @ 600 V
1 µA @ 800 V
1 mA @ 30 V
5 µA @ 1000 V
200 µA @ 40 V
60 µA @ 30 V
5 µA @ 100 V
5 µA @ 600 V
50 µA @ 30 V
10 µA @ 200 V
50 µA @ 100 V
5 µA @ 400 V
100 µA @ 30 V
5 µA @ 200 V
5 µA @ 800 V
5 µA @ 300 V
100 µA @ 40 V
5 µA @ 50 V
800 µA @ 40 V
500 µA @ 30 V
5 µA @ 500 V
3 µA @ 200 V
25 µA @ 40 V
1.5 µA @ 200 V
60 µA @ 40 V
50pF @ 4V,1MHz
21pF @ 0V,1MHz
10pF @ 4V,1MHz
30pF @ 4V,1MHz
15pF @ 4V,1MHz
20pF @ 4V,1MHz
90pF @ 10V,1MHz
35pF @ 10V,1MHz
170pF @ 0V,1MHz
25pF @ 4V,1MHz
35pF @ 4V,1MHz
50pF @ 10V,1MHz
200pF @ 0V,1MHz
130pF @ 0V,1MHz
82pF @ 10V,1MHz
62pF @ 10V,1MHz