Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
1.5A
460 mV @ 1.5 A
360 mV @ 1.5 A
-
1 mA @ 30 V
50 µA @ 30 V