Total: 10
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
1.5A
460 mV @ 1.5 A
360 mV @ 1.5 A
400 mV @ 1 A
430 mV @ 1.5 A
520 mV @ 1.5 A
400 mV @ 1.5 A
-
1 mA @ 30 V
60 µA @ 30 V
50 µA @ 30 V
100 µA @ 30 V
500 µA @ 30 V
90pF @ 10V,1MHz
170pF @ 0V,1MHz
50pF @ 10V,1MHz
200pF @ 0V,1MHz
82pF @ 10V,1MHz