Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
avalanche
100 V
200 V
850mA
980 mV @ 1 A
25 ns
1 µA @ 200 V
1 µA @ 100 V
50pF @ 0V,1MHz