Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
TR,bulk
CoolSiC™+
On sale
stop production
No recovery time > 500mA(Io)
SiC Schottky
600 V
650 V
12A(DC)
1.7 V @ 12 A
2.1 V @ 12 A
1.8 V @ 12 A
0 ns
-
100 µA @ 600 V
190 µA @ 650 V
2.1 mA @ 650 V
360pF @ 1V,1MHz
310pF @ 1V,1MHz