Total: 11
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
box
TR,CT
CT
On sale
Final sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
40 V
200 V
400 V
600 V
30 V
60 V
2A
1.3 V @ 2 A
550 mV @ 2 A
450 mV @ 2 A
980 mV @ 2 A
1.1 V @ 2 A
2 V @ 2 A
580 mV @ 2 A
1.8 V @ 2 A
-
35 ns
100 ns
50 µA @ 600 V
10 µA @ 400 V
5 µA @ 600 V
10 µA @ 600 V
10 µA @ 200 V
500 µA @ 40 V
500 µA @ 30 V
200 µA @ 60 V