Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
SBR®
Automotive, AEC-Q101, SBR®
TrenchSBR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Level barrier
40 V
60 V
3A
530 mV @ 3 A
-
500 µA @ 60 V
400 µA @ 40 V
30 µA @ 40 V
70 µA @ 40 V