Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
600 V
45 V
20A
610 mV @ 30 A
640 mV @ 20 A
2.2 V @ 20 A
-
90 ns
10 µA @ 600 V
600 µA @ 45 V
400 µA @ 45 V