Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
pipe
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1200 V
650 V
23A(DC)
-
2.15 V @ 9 A
0 ns
140 ns
200 µA @ 650 V
100 µA @ 1200 V
887pF @ 1V,100kHz