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Diode rectifier

Total: 6

CUS04(TE85L,Q,M)

Brand：Toshiba

Store: ShenZhen/Hongkong

Description：DIODE SCHOTTKY 60V 700MA US-FLAT

CUS03(TE85L,Q,M)

Brand：Toshiba

Store: ShenZhen/Hongkong

Description：DIODE SCHOTTKY 40V 700MA US-FLAT

DSF07S30U(TPH3,F)

Brand：Toshiba

Store: ShenZhen/Hongkong

Description：DIODE SCHOTTKY 30V 700MA USC

CRG02(TE85L,Q,M)

Brand：Toshiba

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 700MA SFLAT

CRG01(TE85L,Q,M)

Brand：Toshiba

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 100V 700MA SFLAT

Store: ShenZhen/Hongkong

Description：DIODE SCHOTTKY 30V 700MA PCP

Price：1+

￥0.19

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

TR

TR,bulk

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Standard recovery>500ns,> 200mA(Io)

Diode type

standard

Schottky barrier

Voltage DC reverse (Vr) (maximum)

100 V

40 V

400 V

30 V

60 V

Current average rectification (Io)

700mA

Voltage at different If - forward (Vf)

450 mV @ 700 mA

550 mV @ 700 mA

1.1 V @ 700 mA

520 mV @ 700 mA

580 mV @ 700 mA

Reverse recovery time (trr)

-

10 ns

Current - reverse leakage at different Vr

10 µA @ 400 V

50 µA @ 30 V

10 µA @ 100 V

100 µA @ 40 V

80 µA @ 15 V

100 µA @ 60 V

Capacitance at different Vr and F

-

170pF @ 0V,1MHz

45pF @ 10V,1MHz

26pF @ 10V,1MHz

38pF @ 10V,1MHz

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